- 您现在的位置：买卖IC网 > Sheet目录411 > EMH2408-TL-H (ON Semiconductor)MOSFET N-CH DUAL 20V 4A EMH8
EMH2408
4.0
ID -- VDS
5.0
ID -- VGS
VDS=10V
3.5
4.5
4.0
3.0
3.5
2.5
3.0
2.0
1.5
1.5V
2.5
2.0
1.5
1.0
1.0
0.5
0
VGS=1.2V
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.5
1.0
1.5
2.0
=0.5
=1.8
110
100
90
80
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
ID=0.5A
1A
4A
IT13499
Ta=25°C
110
100
90
80
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
A
V, I D
VGS
IT13500
V, I D
=2.5
, I D=
=4.5V
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
VGS
VGS
=1A
4A
0
1
2
3
4
5
6
7
8
--60
--40
--20
0
20
40
60
80
100
120
140
160
7
5
Gate-to-Source Voltage, VGS -- V
| y fs | -- ID
VDS=10V
IT13501
7
5
Ambient Temperature, Ta -- ° C
IS -- VSD
IT13502
VGS=0V
3
3
2
-25
75 °
2
1.0
Ta
=-
° C
C
1.0
7
5
3
7
5
2
5 °
C
2
0.1
7
3
2
0.1
5
3
2
0.01
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
7
0.1
0.3
0.5
0.7
0.9
1.1
5
3
Drain Current, ID -- A
SW Time -- ID
IT13503
VDD=10V
VGS=4.5V
1000
7
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
IT13504
f=1MHz
2
100
7
5
3
Ciss
5
td (off)
2
3
2
tf
100
10
7
td(on)
tr
7
5
Coss
Crss
5
3
2
3
2
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
0
2
4
6
8
10
12
14
16
18
20
Drain Current, ID -- A
IT13505
Drain-to-Source Voltage, VDS -- V
IT13506
No. A1170-3/7
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
EMH2409-TL-H
MOSFET N-CH DUAL 30V 4A EMH8
EMH2411R-TL-H
MOSFET N-CH DUAL 30V 5A EMH8
EMH2412-TL-H
MOSFET N-CH DUAL 24V 6A EMH8
EMH2604-TL-H
MOSFET N/P-CH 20V 4A EMH8
EMH2801-TL-H
MOSFET/SBD P-CH EMH8
ENW1-EW07
LAMP INCAND T1.5 NEO WEDGE 14V
ENW1-EW87
LAMP T1-1/2 NEO WEDGE 14V 0.140A
ENW2-EW10/GRA
LAMP INCAND T1.5 NEO WEDGE 14V
相关代理商/技术参数
EMH2409
制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
EMH2409_12
制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
EMH2409-TL-H
功能描述:MOSFET PCH+NCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
EMH2411R
制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
EMH2411R_12
制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
EMH2411R-TL-H
功能描述:MOSFET NCH+NCH 2.5V DRIVE SERIES
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
EMH2412
制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
EMH2412_12
制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications